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Product Detailed Parameters
- Description：RF TRANS NPN 55V 3.36
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：55V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：8.5dB ~ 10.3dB
- Power - Max：25W
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 500mA, 5V
- Current - Collector (Ic) (Max)：1.25mA
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：3.36E+00
- Supplier Device Package：336E-02, Style 1
- Grade：-
- Qualification：-
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Overview
The MRF10005 is a microwave power silicon bipolar transistor designed for continuous wave and long-pulsed common base amplifier applications. It operates within the 960 to 1215 MHz frequency range with a maximum voltage rating of 28Vdc. The device guarantees an output power of 5.0W CW at 1.215GHz, achieving a minimum gain of 8.5dB and a typical gain of 10.3dB. It features internal input matching for broadband operation and is hermetically sealed in an industry-standard package.
Feature Summary
- Hermetically sealed industry standard package
- Silicon nitride passivated construction
- Gold metallized emitter ballasted design
- Internal input matching for broadband operation
Applications
- JTIDS systems
- Mode S applications
- CW amplifiers
- Long-pulsed common base amplifiers
Procurement Notes
Verify the specific datasheet revision (e.g., Rev. V1) against the manufacturer's official documentation before procurement. Confirm that the component meets all absolute maximum ratings and operational conditions required by the target circuit design. Ensure compatibility with the specified frequency range and voltage levels during the sourcing process.
Selection Notes
Select this component for designs requiring high overall duty cycles in the 0.96 to 1.215 GHz band. Evaluate thermal management requirements based on the 5.0W CW output capability. Consider the 28Vdc operating voltage when designing bias networks. Verify load mismatch tolerance specifications if the application involves variable impedance environments.
Part Context
This part belongs to MACOM's portfolio of microwave power silicon bipolar transistors. It is engineered specifically for robust performance in demanding RF environments. The device utilizes gold metallization and emitter ballasting to ensure longevity and resistance to metal migration under high-power conditions.
Replacement Considerations
Consult MACOM technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating pinouts, electrical parameters, and package dimensions against the official datasheet.
FAQ
What is the guaranteed output power specification?
The MRF10005 guarantees an output power of 5.0W CW at 1.215GHz with a 28Vdc supply.
Is the device suitable for medical life-sustaining applications?
No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.
What type of packaging does the MRF10005 utilize?
It uses a hermetically sealed industry standard package (CASE 336E-02, STYLE 1).
