MRF101BN

Overview

The MRF101BN is a high ruggedness N-Channel Enhancement-Mode Lateral MOSFET designed for HF and VHF communications, ISM, broadcast, and aerospace applications. It operates up to 250 MHz with a drain-source voltage of 133 Vdc and gate-source voltage range of -6.0 to +10 Vdc. The device delivers approximately 100 W CW output power at 50 Vdc across the frequency band. Key electrical characteristics include a forward transconductance of 7.1 S, input capacitance of 149 pF, and total device dissipation of 182 W at 25°C case temperature.

Feature Summary

• Mirror pinout versions (A and B) available to simplify use in push-pull configurations
• Characterized from 30 to 50 V for flexible biasing options
• Integrated ESD protection with extended negative gate-source voltage range
• Suitable for linear RF power amplifier applications

Applications

• Industrial, scientific, and medical (ISM) equipment such as laser generation and plasma etching
• HF and VHF radio communications systems
• Radio and VHF TV broadcast transmitters
• Medical imaging devices including MRI systems
• Switch mode power supplies

Procurement Notes

Verify the specific suffix BN indicates the Drain-Source-Gate pinout configuration distinct from the AN variant. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation, as historical data may vary. Ensure the component meets current environmental regulations applicable to your region before finalizing procurement specifications.

Selection Notes

Select the MRF101BN when a mirror pinout configuration is required for balanced push-pull circuit designs. Consider this device for wideband applications requiring operation from 1.8 MHz to 250 MHz. Evaluate thermal management requirements based on the 1.1 °C/W junction-to-case thermal resistance. Verify that the system can accommodate the specified maximum operating junction temperature of 175°C for reliable long-term performance.

Part Context

This component belongs to the MRF101 series of broadband RF power LDMOS transistors manufactured by NXP Semiconductors. The series includes variants like the MRF101AN, which shares identical electrical performance but features a Gate-Source-Drain pinout. Both variants are included in the NXP product longevity program, ensuring assured supply for a minimum of 15 years after launch.

Replacement Considerations

The MRF101AN serves as a functional substitute with identical electrical specifications. Designers must account for the reversed pinout configuration between the AN and BN variants during PCB layout and assembly to ensure correct connectivity.