MRF1090MB

$43.97

Description：RF TRANS NPN 70V 332A-03
Series：-

SKU:5d47105cfa75 Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 70V 332A-03
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：70V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：10.8dB
Power - Max：90W
DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 2.5A, 5V
Current - Collector (Ic) (Max)：6A
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：332A-03
Supplier Device Package：332A-03, Style 1
Grade：-
Qualification：-

Download product information

MRF1090MB

Overview

The MRF1090MB is a microwave pulse power silicon NPN transistor manufactured by MACOM Technology Solutions. It operates within the 960–1215 MHz frequency range and is designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. The device guarantees an output power of 90 W peak and a minimum gain of 8.4 dB at 1090 MHz with a 50 Vdc supply. It features internal input matching for broadband operation and undergoes 100% testing for load mismatch at all phase angles with a 10:1 VSWR.

Feature Summary

Nitride passivation and gold metallization for long life and resistance to metal migration
Internal input matching designed for broadband operation
100% tested for load mismatch at all phase angles with 10:1 VSWR

Applications

Short pulse TACAN transmitters
IFF (Identification Friend or Foe) transmitters
DME (Distance Measuring Equipment) transmitters

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement. Confirm that the intended application strictly adheres to the specified Class B and C common base amplifier configurations. Ensure thermal management aligns with the component's maximum ratings to prevent damage during high-power pulse operations.

Selection Notes

Select this component when designing systems requiring high peak output power within the 960–1215 MHz band. It is specifically suited for military and aviation navigation equipment such as TACAN, IFF, and DME. Consider its robustness against load mismatches when choosing between standard and ruggedized RF power transistors.

Part Context

This part belongs to the family of microwave pulse power silicon NPN transistors from MACOM. It shares design similarities with other models like the MRF1004MB and MRF1150MA, which cover different power levels within the same frequency spectrum. These components are engineered for demanding pulsed radar and communication transmitter environments.