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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：700MHz ~ 1.3GHz
- Gain：20.6dB
- Voltage - Test：50 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：-
- Power - Output：650W
- Voltage - Rated：105 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-979A
- Supplier Device Package：NI-1230-4H
- Configuration：Dual
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Overview
The MRF13750HR5 is a dual N-channel enhancement-mode LDMOS power transistor designed for industrial, scientific, and medical (ISM) applications in the 700 to 1300 MHz frequency range. It delivers 750 W CW output at 915 MHz with 67.1% drain efficiency and 19.3 dB gain under 50 Vdc bias. The device supports pulse operation up to 850 W peak power. Maximum ratings include a drain-source voltage of 105 Vdc and an operating junction temperature range from -40°C to +225°C. Total device dissipation is 1333 W at 25°C case temperature.
Feature Summary
- Internally input pre-matched for ease of use
- Device can be used single-ended or in a push-pull configuration
- Characterized for 30 to 50 V
- Suitable for linear applications with appropriate biasing
- Integrated ESD protection
Applications
- 915 MHz industrial heating/welding systems
- 1300 MHz particle accelerators
Procurement Notes
Verify the R5 suffix indicates tape and reel packaging containing 50 units on a 13-inch reel with 56 mm tape width. Confirm the package type is NI-1230H-4S. Ensure compatibility with recommended driver MRFE6VS25GN. Check current product status as the base model may have lifecycle variations.
Selection Notes
Select this component for narrowband ISM operations requiring high power density. Evaluate thermal management requirements given the 0.15 °C/W junction-to-case resistance. Verify biasing circuits support the specified quiescent currents. Consider ruggedness against load mismatches exceeding 10:1 VSWR.
Part Context
This part belongs to the MRF13750H family of RF power LDMOS transistors. It shares core electrical characteristics with the MRF13750HS variant but differs in packaging and reel specifications. The series is included in NXP's product longevity program ensuring supply assurance.
Replacement Considerations
MRF13750HS serves as a functional equivalent within the same family. Verify package dimensions and pinout compatibility before substitution. Confirm that thermal and electrical parameters meet application requirements.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) is rated at -0.5 to +105 Vdc.
Is the device suitable for linear amplification?
Yes, the transistor is suitable for linear applications when provided with appropriate biasing.
What is the recommended driver for this transistor?
NXP recommends the MRFE6VS25GN (25 W) as the typical driver for this device.
