MRF13750HSR5

Overview

The MRF13750HSR5 is a dual N-channel enhancement-mode LDMOS power transistor designed for industrial, scientific, and medical applications in the 700 to 1300 MHz range. It delivers 750 W CW at 915 MHz with 67.1% drain efficiency and 19.3 dB gain. The device supports pulse operation up to 850 W peak output. It features an internally input pre-matched design suitable for single-ended or push-pull configurations. The R5 suffix indicates tape and reel packaging containing 50 units on a 56 mm wide, 13-inch reel.

Feature Summary

• Internally input pre-matched for ease of use
• Suitable for linear applications with appropriate biasing
• Integrated ESD protection

Applications

• 915 MHz industrial heating/welding systems
• 1300 MHz particle accelerators
• Narrowband ISM applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm that the component status aligns with current supply programs. Ensure compatibility with recommended driver stages such as the MRFE6VS25GN. Validate thermal management requirements based on case operating temperature limits.

Selection Notes

Select this transistor for high-power narrowband RF applications requiring robust performance in the 700 to 1300 MHz spectrum. Consider its suitability for both continuous wave and pulsed power operations. Evaluate the internal matching network benefits for simplified circuit design. Assess the need for linear amplification capabilities with appropriate biasing schemes.

Part Context

This component belongs to the MRF13750H series of RF power LDMOS transistors from NXP Semiconductors. The series includes variants like the MRF13750H and MRF13750HS, differentiated primarily by packaging. These devices are engineered for high reliability and longevity within industrial and scientific sectors.

Replacement Considerations

Consult official substitution lists for verified alternatives. No direct public substitute part numbers are confirmed in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 Vdc to +105 Vdc.

Can the device be used in a push-pull configuration?

Yes, the device can be used in either single-ended or push-pull configurations.

What is the typical drain efficiency at 915 MHz CW?

The typical drain efficiency at 915 MHz CW is 67.1%.