MRF141G

Overview

The MRF141G is an RF power FET designed for broadband commercial and military applications at frequencies up to 175 MHz. It delivers 300W output power with a typical gain of 14dB and efficiency of 50% when operated at 28V. The device features a low thermal resistance of 0.35°C/W and utilizes nitride passivation for enhanced reliability.

Feature Summary

• High power, high gain, and broadband performance
• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability

Applications

• FM broadcast solid state transmitters
• TV channel frequency band solid state transmitters
• Broadband commercial amplifiers
• Military amplifiers

Procurement Notes

Verify the datasheet revision (Rev. V1) and specific operating conditions against your design requirements. Confirm that the application environment aligns with the specified frequency range and voltage parameters. Ensure proper thermal management solutions are implemented given the device's power dissipation characteristics.

Selection Notes

Select this component for designs requiring high output power in the VHF band. Consider the 28V supply requirement and the need for robust heat sinking due to the 300W power level. Evaluate the 0.35°C/W thermal resistance to ensure adequate cooling infrastructure is available for continuous operation.

Part Context

This part belongs to MACOM's portfolio of RF power transistors engineered for demanding transmission environments. It serves as a core active element in linear amplifier stages where consistent performance across a wide bandwidth is critical for signal fidelity in broadcasting systems.

Replacement Considerations

Consult official MACOM documentation for direct pin-compatible substitutes or updated series replacements. Verify electrical parameter compatibility before integrating alternative components into existing transmitter architectures.