MRF151

MRF151

  • Description:RF MOSFET 50V
  • Series:-

SKU:13aa2708175a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 50V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:175MHz
  • Gain:13dB ~ 22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):16A
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:150W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:N-Channel

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MRF151

Overview

The MRF151 is an N-Channel RF Power MOSFET designed for broadband commercial and military applications up to 175 MHz. It delivers 150 W output power at 50 V bias. At 30 MHz, it guarantees 18 dB gain (22 dB typical) and 40% efficiency. At 175 MHz, typical performance includes 13 dB gain with 150 W output. The device features low thermal resistance and a nitride-passivated die for enhanced reliability.

Feature Summary

  • Nitride passivated die for enhanced reliability
  • Ruggedness tested at rated output power
  • Low thermal resistance design

Applications

  • Solid state transmitters for FM broadcast
  • TV channel frequency band transmitters
  • Broadband commercial applications
  • Broadband military applications

Procurement Notes

Verify the specific revision status of the datasheet against the manufacturer's official documentation before finalizing procurement. Confirm that the component meets all required environmental and ruggedness specifications for the intended operational environment. Ensure compatibility with existing thermal management solutions given the specified power dissipation requirements.

Selection Notes

Select this component when designing systems requiring high power output in the HF/VHF bands. Consider the guaranteed performance metrics at 30 MHz versus typical performance at 175 MHz during circuit design. Evaluate the thermal resistance characteristics to ensure adequate heat sinking is implemented for reliable operation under continuous wave conditions.

Part Context

This part belongs to MACOM's portfolio of RF power field-effect transistors. It is specifically engineered as an N-Channel Broadband MOSFET. The device targets applications demanding high linearity and power density within the 175 MHz frequency range.

Replacement Considerations

Consult the manufacturer's official substitution guide for verified equivalent parts. Do not assume cross-compatibility with other series without verifying pinout and electrical parameter alignment.

FAQ

What is the guaranteed gain at 30 MHz?

The MRF151 guarantees 18 dB gain at 30 MHz with 50 V bias.

How is the die protected for reliability?

The device utilizes a nitride passivated die to enhance reliability.

Is the device suitable for medical life-sustaining applications?

No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.

MRF151MRF151

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