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The MRF1517NT1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications at frequencies up to 520 MHz. It provides 8 Watts of output power with a typical gain of 14 dB and efficiency of 70% at 520 MHz and 7.5 Volts. The device features excellent thermal stability, characterized by series equivalent large-signal impedance parameters, and can withstand 20:1 VSWR under overdrive conditions.
Verify the component status as discontinued or end-of-life through official manufacturer channels before finalizing designs. Confirm that the PLD-1.5 package dimensions and thermal resistance specifications align with current manufacturing capabilities and heat sinking requirements for the intended application environment.
Select this device for VHF and UHF portable power amplifier applications requiring high gain and broadband performance. Ensure the design accommodates the 7.5 Volt supply voltage and utilizes appropriate impedance matching networks. Consider the surface mount PLD-1.5 package for automated pick-and-place manufacturability while ensuring adequate thermal management.
This component belongs to the MRF1517N series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor (now NXP USA Inc.). It is a lateral N-channel MOSFET specifically engineered for broadband operation up to 520 MHz, offering a balance of power output and efficiency suitable for mobile communication equipment.
No direct form-fit-function replacements are documented in the provided datasheet. Verify if alternative parts from the same family or updated generations are available through official NXP channels.