MRF151G

MRF151G

$134.01
  • Description:RF MOSFET 50V 375-04
  • Series:-

SKU:4ca8a80df280 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 50V 375-04
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:175MHz
  • Gain:16dB
  • Voltage - Test:50 V
  • Current Rating (Amps):40A
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:300W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:375-04
  • Supplier Device Package:375-04, Style 2
  • Configuration:2 N-Channel (Dual) Common Source

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MRF151G

Overview

The MRF151G is an N-channel broadband RF power MOSFET designed for commercial and military applications up to 175 MHz. It delivers a guaranteed output power of 300 W at 50 V with a gain of 14 dB (typical 16 dB) and efficiency of 50%. The device features low thermal resistance of 0.35°C/W and ruggedness tested at rated output power. Nitride passivation enhances reliability.

Feature Summary

  • Nitride passivated die for enhanced reliability
  • Ruggedness tested at rated output power

Applications

  • Solid state transmitters for FM broadcast bands
  • Solid state transmitters for TV channel frequency bands

Procurement Notes

Verify the specific datasheet revision, such as Rev. V1, against current MACOM documentation before finalizing designs. Confirm that the component meets all required environmental specifications for the intended deployment environment. Ensure compatibility with existing thermal management solutions given the specified thermal resistance characteristics.

Selection Notes

Select this component for high-power broadband applications requiring operation up to 175 MHz. Consider its suitability for solid-state transmitter architectures in FM and TV broadcasting sectors. Evaluate the thermal requirements based on the 0.35°C/W thermal resistance specification to ensure adequate heat dissipation in the final assembly.

Part Context

This part belongs to the M/A-COM Technology Solutions RF Power Field-Effect Transistor portfolio. It is specifically engineered as an N-channel Broadband MOSFET. The product line targets robust performance in demanding radio frequency environments.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers or updated revisions. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical and mechanical validation.

FAQ

What is the typical gain of the MRF151G?

The typical gain is 16 dB, while the guaranteed minimum gain is 14 dB.

How is the reliability of the MRF151G enhanced?

Reliability is enhanced through a nitride passivated die structure.

Is the MRF151G suitable for medical applications?

No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.

MRF151GMRF151G
$134.01
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