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The MRF1535FNT1 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications up to 520 MHz. It delivers 35 Watts output power with 13.5 dB gain and 55% efficiency at 12.5 Volts. The device operates within a drain-source voltage range of -0.5 to +40 Vdc, supports continuous drain currents up to 6 Adc, and features a junction-to-case thermal resistance of 0.90 °C/W. It utilizes a TO-272-6 wrap plastic package.
Verify the specific ordering suffix against current manufacturer documentation to confirm lead-free termination status and tape-and-reel specifications. Ensure compatibility with standard automated pick-and-placement processes. Confirm that the component meets RoHS compliance requirements for your target market regulations before finalizing procurement orders.
Select this component for designs requiring high gain and wide bandwidth in the VHF/UHF spectrum. Consider the 12.5 Volt operating requirement and ensure adequate thermal management due to the 135 Watt dissipation rating. Verify that the application circuit provides appropriate gate protection and biasing networks to maintain stability and prevent oxide layer damage.
This device belongs to the Freescale Semiconductor (now NXP) family of lateral RF power MOSFETs. It serves as an alternative to the MRF1535NT1 variant, sharing identical electrical characteristics and functionality while differing primarily in packaging or termination specifications.
The MRF1535NT1 is a confirmed substitute part number with no form, fit, or function changes relative to the MRF1535FNT1.