MRF157

Overview

The MRF157 is a linear RF power MOSFET designed for large signal output stages operating up to 80 MHz. It delivers an output power of 600 watts with a typical power gain of 21 dB and efficiency of 45%. The device is specified at 50 volts and 30 MHz characteristics. It utilizes silicon technology and features a dual N-Channel configuration. Key electrical parameters include a continuous drain current of 60 A, a drain-source breakdown voltage of 125 V, and a gate-source threshold voltage of 3 V. Maximum ratings encompass a power dissipation of 1.35 kW and an operating temperature range from -65°C to +150°C.

Feature Summary

• Designed primarily for linear large signal output stages
• Utilizes conduction cooling package design
• Features high input resistance gate structure

Applications

• Linear RF power amplification
• Large signal output stage implementation
• Broadband amplifier circuits

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V1) against the manufacturer's official documentation before procurement. Confirm that the physical mounting flange meets the required flatness tolerance of ±0.0005 inches to ensure proper thermal contact. Ensure that external gate protection components are included in the design if necessary, as the device lacks internal monolithic zener diodes. Validate all mechanical dimensions and torque specifications with the latest MACOM guidelines.

Selection Notes

Select this component for applications requiring high linear power output below 80 MHz. Consider the thermal management requirements carefully, as the device relies on conduction cooling through the mounting flange. Evaluate the need for external gate protection circuitry due to the absence of internal zener diodes. Assess the impedance matching network capabilities, as output impedances are not explicitly provided for high-power operation levels.

Part Context

The MRF157 belongs to the family of linear RF power MOSFETs manufactured by MACOM Technology Solutions. These devices are engineered for robust performance in radio frequency applications. The product line emphasizes high power density and linear operation characteristics suitable for demanding signal processing environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material.

FAQ

Does the MRF157 include internal gate protection?

No, the device does not have an internal monolithic zener diode from gate-to-source. External zener diodes are recommended if gate protection is required.

How should the device be cooled?

The package is designed for conduction cooling. It is critical to minimize thermal resistance between the device flange and the heat dissipator using appropriate thermal compound and mounting techniques.

Why are output impedances not listed for this device?

Output impedances are not given for high-power devices like the MRF157 because practical measurement becomes difficult at high power levels due to the physical sizes and values required for components to withstand high RF currents.