MRF1570NT1

Description：RF MOSFET LDMOS 12.5V TO272-8
Series：-

SKU:1972d526df69 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 12.5V TO272-8
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：470MHz
Gain：11.5dB
Voltage - Test：12.5 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：800 mA
Power - Output：70W
Voltage - Rated：40 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：TO-272-8
Supplier Device Package：TO-272-8 Wrap
Configuration：-

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MRF1570NT1

Overview

The MRF1570NT1 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications up to 470 MHz. It operates at 12.5 Vdc with a maximum drain-source voltage of 40 Vdc. At 470 MHz, the device delivers 70 W output power with 11.5 dB gain and 60% efficiency. It features excellent thermal stability and can withstand 20:1 VSWR under overdrive conditions. The component utilizes a TO-272-8 wrap plastic package.

Feature Summary

Broadband performance supporting full power across 135-175 MHz and 400-470 MHz bands
High ruggedness capable of handling severe load mismatches without damage
Excellent thermal stability inherent to lateral MOSFET construction
Characterized with series equivalent large-signal impedance parameters

Applications

Large-signal common source amplifier applications in mobile FM equipment
Broadband commercial and industrial RF applications
VHF and UHF mobile power amplifier designs

Procurement Notes

Verify the specific suffix configuration against current datasheet documentation. Confirm that the T1 suffix corresponds to tape and reel packaging containing 500 units on a 44 mm, 13-inch reel. Ensure compatibility with RoHS compliance standards and lead-free termination requirements specified for this part number.

Selection Notes

Select this component for designs requiring high gain and broadband operation within the VHF and UHF spectrum. Consider the 12.5 V supply requirement and the necessity for adequate heat sinking due to the surface mount package. Evaluate the need for external gate protection or stability networks based on the specific circuit topology and load conditions.

Part Context

This device belongs to the Freescale Semiconductor (now NXP) family of lateral RF power MOSFETs. It was originally designated as MRF1570T1/FNT1 before transitioning to the MRF1570NT1/FNT1 nomenclature. The product line emphasizes ruggedness and thermal stability for mobile radio and industrial transmitter environments.