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The MRF174 is an N-channel enhancement mode RF MOSFET designed for UHF power amplifier applications up to 200 MHz. It features a vertical planar structure and Case 211-11, Style 2 packaging. At 150 MHz with 28 Vdc bias, it delivers 125 W output power with a minimum gain of 9.0 dB and efficiency of 50%. The device exhibits excellent thermal stability suitable for Class A operation and includes a typical noise figure of 3.0 dB at 2.0 A.
Verify the specific revision status against the manufacturer's current documentation before finalizing designs. Confirm that the Case 211-11, Style 2 package dimensions align with the intended mechanical layout. Ensure the application environment supports the required thermal management for continuous operation at rated power levels.
Select this component for wideband UHF applications requiring robust performance under mismatched load conditions. The enhancement mode architecture simplifies biasing requirements compared to depletion devices. Consider the 9.0 dB minimum gain and 125 W output capability when designing matching networks for target frequency bands around 150 MHz.
This device belongs to the MACOM RF MOSFET line, characterized by vertical structures that avoid V-groove processing difficulties. It is engineered specifically for UHF power amplifier environments where reliability under severe mismatch is critical. The product utilizes standard screw-mount packaging compatible with established thermal interface standards.
Consult official MACOM documentation for direct replacements. Verify that any substitute maintains the Case 211-11, Style 2 footprint and meets the 125 W output requirement at the target operating frequency.