MRF175GV

Overview

The MRF175GV is an N-channel enhancement mode RF MOSFET transistor designed for broadband commercial and military applications. It operates at frequencies up to 500 MHz with a 28 V supply voltage. The device delivers 200 W of output power, achieving a typical power gain of 14 dB and efficiency of 65% at 225 MHz. It features low thermal resistance and a reverse transfer capacitance (Crss) of 20 pF typ at VDS = 28 V.

Feature Summary

• Designed for push-pull circuit configurations in solid-state transmitters
• High power capability with high gain and broadband performance
• 100% ruggedness tested at rated output power
• Low thermal resistance structure

Applications

• Broadband commercial applications
• Military applications
• FM broadcast transmitters
• TV channel frequency band transmitters

Procurement Notes

Verify the specific suffix 'V' against official documentation to confirm performance parameters, as datasheets may define distinct electrical characteristics for different suffixes. Ensure compatibility with required operating frequencies and power levels before procurement. Confirm package style and mounting requirements match system design constraints.

Selection Notes

Select this component for HF, VHF, and UHF power amplifier applications requiring high gain and simple bias systems. Consider its relative immunity from thermal runaway and ability to withstand severely mismatched loads. Evaluate gate protection needs, as the device lacks internal monolithic zener diodes and requires external components for transient damping.

Part Context

The MRF175G series consists of RF power N-channel enhancement mode field-effect transistors featuring a vertical structure with a planar design. These devices are optimized for linear amplification and offer power output control via DC gate voltage variation, facilitating AGC/ALC and modulation system designs.

Replacement Considerations

Consult official MACOM documentation for confirmed substitute part numbers. Verify that any replacement maintains equivalent power, gain, and frequency specifications.

FAQ

Does the MRF175GV have internal gate protection?

No, these devices do not have an internal monolithic zener diode from gate-to-source. External zener diodes are recommended if gate protection is required.

How is the gate bias applied for operation?

As an enhancement mode FET, it does not conduct when only drain voltage is applied. A positive voltage slightly exceeding the gate-to-source threshold voltage must be applied to the gate to allow current flow.

What handling precautions are necessary for this component?

Devices should be transported in antistatic bags or conductive foam. Handling should avoid touching leads, and soldering must be performed with grounded equipment to prevent damage.