MRF176GV

Overview

The MRF176GV is an N-channel enhancement mode RF MOSFET transistor designed for broadband commercial and military applications. It operates at frequencies up to 500 MHz with a 50 V drain supply. At 225 MHz, the device delivers 200 W output power with 17 dB typical power gain and 55% efficiency. The component features low thermal resistance and is ruggedness tested at rated output power.

Feature Summary

• N-channel enhancement mode construction
• Broadband performance suitable for push-pull circuits
• Immunity from thermal runaway
• Ability to withstand severely mismatched loads

Applications

• Solid state transmitters for FM broadcast
• TV channel frequency band transmitters
• HF, VHF and UHF power amplifier applications

Procurement Notes

Verify the specific suffix against official documentation to confirm electrical characteristics. The datasheet specifies distinct performance metrics for different suffixes at varying frequencies. Ensure the procurement matches the required operational frequency and power output specifications defined in the manufacturer's technical data.

Selection Notes

Select this component for designs requiring high power output and gain in the HF to UHF spectrum. Consider the gate voltage rating limits during bias circuit design. Verify that the application environment supports the thermal management requirements associated with the specified power dissipation levels.

Part Context

This part belongs to the MACOM RF MOSFET line featuring vertical structure with planar design. It is intended for use in solid state transmitters where high reliability and linear performance are required. The device is characterized for operation within standard commercial and military temperature ranges.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters and package compatibility.

FAQ

Does the MRF176GV have an internal monolithic zener diode?

No, these devices do not have an internal monolithic zener diode from gate-to-source. External protection is recommended.

What is the maximum gate-to-source voltage rating?

The maximum gate-to-source voltage rating is 40 V. Exceeding this can rupture the gate insulation.

How is the gate of the MRF176GV electrically isolated?

The gate is made of polysilicon material and is electrically isolated from the source by a layer of oxide, resulting in very high input resistance.