MRF18030ALSR5

Overview

The MRF18030ALSR5 is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and EDGE base station applications operating between 1800 MHz and 2000 MHz. It delivers a typical output power of 30 Watts with 14 dB gain and 50% efficiency at 26 Vdc. The device features internal input and output matching, integrated ESD protection, and high linearity. It is specified for the GSM 1805-1880 MHz band and can handle 5:1 VSWR.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection
• Optimized for maximum gain and insertion phase flatness
• High thermal stability and robust handling of mismatched loads

Applications

• GSM and EDGE base station amplifiers
• FM, TDMA, and CDMA amplifier applications
• Multicarrier amplifier systems

Procurement Notes

Verify the specific suffix 'LSR5' against official documentation, as datasheets primarily reference 'LR3' and 'LSR3'. Confirm RoHS compliance status and lead plating specifications directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for designs requiring high gain and efficiency in the 1800-2000 MHz range. Ensure the application supports a 26 Vdc supply and provides adequate thermal management for the TO-269 package. Verify that the system impedance matches the 50 ohm requirement for optimal performance.

Part Context

This part belongs to the Freescale Semiconductor RF MOSFET Line, specifically the N-channel enhancement-mode lateral MOSFETs category. It is intended for wireless communication infrastructure, providing a balance of power, gain, and linearity for cellular network base stations.

Replacement Considerations

MRF18030BLR3 and MRF18030BLSR3 are listed as related components within the same RF Power Field Effect Transistors family.