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The MRF18030BLSR3 is an N-channel enhancement-mode lateral RF power MOSFET from the Freescale Semiconductor RF MOSFET line. Designed for base station applications, it operates within the 1.8 to 2.0 GHz frequency range and is specified for GSM 1930–1990 MHz. The device delivers a typical output power of 30 Watts with a power gain of 14 dB and efficiency of 50% at this power level when operated at 26 Vdc. It features internal matching and controlled Q for ease of integration.
Verify the specific suffix 'SR3' against official documentation to confirm packaging details, as standard datasheets may reference 'R3' (Tape and Reel). Ensure compatibility with existing thermal management solutions designed for lateral MOSFET packages. Confirm RoHS compliance status through current manufacturer declarations rather than relying solely on historical data.
Select this component for designs requiring integrated matching networks to reduce external component count. It is suitable for linear amplifier stages in cellular infrastructure where phase flatness and gain stability are critical. Consider the 26 Vdc supply requirement and thermal dissipation needs associated with 30 W CW output power during system architecture planning.
This part belongs to the MRF series of lateral N-channel enhancement-mode MOSFETs developed by Freescale Semiconductor, now part of NXP Semiconductors. These devices are engineered specifically for wireless communication infrastructure, offering a balance of power density and linearity required for modern digital modulation schemes used in mobile telecommunications.
The MRF18030BLR3 is listed as a related variant in manufacturer catalogs. Verify if the 'S' suffix indicates a specific tape-and-reel configuration or package variation that impacts mechanical fit or electrical performance before substitution.