MRF18060ALR5

Overview

The MRF18060ALR5 is a lateral N-channel enhancement-mode RF power MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It supports FM, TDMA, CDMA, and multicarrier amplifier configurations in Class AB operation. The device delivers 60 W output power at 45% drain efficiency with 13 dB power gain across the 1805–1880 MHz GSM band. It features internal input and output matching, integrated ESD protection, and excellent thermal stability.

Feature Summary

• Internally matched for ease of use
• High gain, high efficiency and high linearity
• Integrated ESD protection
• Designed for maximum gain and insertion phase flatness

Applications

• PCN and PCS base station applications
• FM, TDMA, CDMA and multicarrier amplifier applications
• Class AB PCN-PCS/cellular radio applications
• WLL applications

Procurement Notes

Verify the exact ordering suffix against official documentation to confirm package style and lead plating specifications. Confirm availability status as archived products may have limited supply channels. Ensure compatibility with existing thermal management designs given the specified junction-to-case thermal resistance. Validate that the component meets RoHS compliance requirements for your specific manufacturing process.

Selection Notes

Select this component for cellular infrastructure requiring high power density and broad bandwidth coverage within the 1.8 GHz to 2.0 GHz range. Consider its internal matching capabilities to simplify RF circuit design and reduce external component count. Evaluate thermal performance based on the specified maximum junction temperature and total device dissipation ratings under continuous wave conditions.

Part Context

This part belongs to the MRF18060A family of lateral N-channel RF power MOSFETs originally developed by Freescale Semiconductor. The product line targets wireless communication base stations, specifically focusing on the PCS and PCN frequency bands. The device represents an evolution in RF power semiconductor technology aimed at improving efficiency and linearity for modern cellular standards.

Replacement Considerations

MRF18060ALR3

FAQ

What is the typical power gain at 60 Watts output?

The typical power gain is 13 dB when operating at 60 Watts output power within the 1805–1880 MHz frequency range.

Does the device include internal matching networks?

Yes, the MRF18060ALR5 is internally matched on both the input and output ports to facilitate easier integration into RF circuits.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.