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The MRF18090AR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications in the 1800 to 2000 MHz frequency range. It delivers 90 Watts of output power at 1805 MHz with a typical drain efficiency of 52% and power gain of 13.5 dB under Class AB operation (VDD = 26 Vdc, IDQ = 750 mA). The device features internal matching networks and integrated ESD protection, characterized by high linearity and thermal stability.
Verify component authenticity through authorized channels. Confirm RoHS compliance status and check for specific manufacturing lot codes. Ensure proper handling procedures are followed due to the sensitivity of RF power devices. Validate that the R3 suffix corresponds to the required tape and reel packaging specifications before finalizing procurement orders.
Select this component for designs requiring 90 W output power within the 1800–2000 MHz band. Ensure the bias circuit supports 26 Vdc supply and approximately 750 mA quiescent current. Verify that the PCB layout accommodates the NI-880 package dimensions and provides adequate thermal management for the specified junction-to-case thermal resistance.
This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor product family. It is specifically engineered for broadband commercial applications, offering robust performance in multi-carrier environments. The device integrates impedance matching to simplify amplifier design while maintaining high reliability and thermal stability across varying operating conditions.
No public confirmed substitute part numbers are available.