MRF18090AR3

MRF18090AR3

$128.45
  • Description:RF MOSFET LDMOS 26V NI880H
  • Series:-

SKU:f60d376f8125 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI880H
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.81GHz
  • Gain:13.5dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:90W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-880H-2L
  • Configuration:-

Download product information

MRF18090AR3

Overview

The MRF18090AR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications in the 1800 to 2000 MHz frequency range. It delivers 90 Watts of output power at 1805 MHz with a typical drain efficiency of 52% and power gain of 13.5 dB under Class AB operation (VDD = 26 Vdc, IDQ = 750 mA). The device features internal matching networks and integrated ESD protection, characterized by high linearity and thermal stability.

Feature Summary

  • Internally matched for ease of use
  • High gain, high efficiency, and high linearity
  • Integrated ESD protection
  • Designed for maximum gain and insertion phase flatness

Applications

  • GSM base station applications
  • GSM EDGE cellular radio applications
  • FM amplifier applications
  • TDMA amplifier applications
  • CDMA amplifier applications

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status and check for specific manufacturing lot codes. Ensure proper handling procedures are followed due to the sensitivity of RF power devices. Validate that the R3 suffix corresponds to the required tape and reel packaging specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring 90 W output power within the 1800–2000 MHz band. Ensure the bias circuit supports 26 Vdc supply and approximately 750 mA quiescent current. Verify that the PCB layout accommodates the NI-880 package dimensions and provides adequate thermal management for the specified junction-to-case thermal resistance.

Part Context

This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor product family. It is specifically engineered for broadband commercial applications, offering robust performance in multi-carrier environments. The device integrates impedance matching to simplify amplifier design while maintaining high reliability and thermal stability across varying operating conditions.

Replacement Considerations

No public confirmed substitute part numbers are available.

MRF18090AR3MRF18090AR3
$128.45
Buy Now