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Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V NI400
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.96GHz
- Gain：13dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：300 mA
- Power - Output：30W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-400S
- Supplier Device Package：NI-400S
- Configuration：-
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Overview
The MRF19030LSR5 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It features a NI-400S package with internal input and output matching networks. The device supports CDMA, FM, TDMA, and multicarrier amplifier applications in Class AB configurations. Key electrical parameters include a drain-source breakdown voltage of 65 Vdc, a typical power gain of 13 dB at 1960 MHz, and a two-tone drain efficiency of 36% at 30 W PEP output.
Feature Summary
- Internally matched for ease of use
- High gain, high efficiency and high linearity
- Integrated ESD protection
- Designed for maximum gain and insertion phase flatness
Applications
- PCN and PCS base station applications
- FM, TDMA, CDMA and multicarrier amplifier applications
- Class AB cellular radio and WLL applications
Procurement Notes
Verify the specific suffix 'SR5' against official documentation to confirm tape and reel specifications. Confirm RoHS compliance status as required by project standards. Ensure thermal management solutions align with the specified junction-to-case thermal resistance. Validate that the NI-400S package dimensions match the intended PCB layout constraints.
Selection Notes
Select this component for designs requiring integrated matching within the L-band frequency range. Consider the thermal characteristics and case operating temperature limits when designing heat dissipation paths. Evaluate the internal ESD protection capabilities against system-level electrostatic discharge requirements. Verify compatibility with Class AB biasing schemes for optimal linearity and efficiency performance.
Part Context
This part belongs to the MRF19030 series of RF power field-effect transistors manufactured by NXP USA Inc. (formerly Freescale Semiconductor). The series includes variants such as MRF19030LR3 and MRF19030LSR3, differing primarily in packaging and reel specifications. These devices are engineered specifically for wireless communication infrastructure.
Replacement Considerations
MRF19030LR3
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) rating is +65 Vdc.
Is the device internally matched?
Yes, the MRF19030LSR5 is internally matched on both the input and output ports.
What is the typical power gain at 1960 MHz?
The typical power gain is 13 dB at 1960 MHz under standard test conditions.
