MRF19045LSR5

Overview

The MRF19045LSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for PCN and PCS base station applications operating between 1900 MHz and 2000 MHz. It supports TDMA, CDMA, and multicarrier amplifier configurations. The device features internal matching for input and output circuits to simplify integration. Key electrical characteristics include a drain-source breakdown voltage of 65 Vdc, a total device dissipation of 105 W at 25°C case temperature, and a thermal resistance from junction to case of 1.65 °C/W. Typical performance at 1930 MHz with 26 Vdc supply and 550 mA quiescent current yields 9.5 Watts average output power, 14.9 dB power gain, and 23.5% drain efficiency.

Feature Summary

• Internally matched on both input and output ports to facilitate straightforward circuit design and reduce external component requirements.
• Engineered for high gain, high efficiency, and high linearity in large-signal common-source amplifier applications.
• Incorporates integrated electrostatic discharge (ESD) protection mechanisms to enhance device robustness during handling and operation.
• Characterized using series equivalent large-signal impedance parameters to optimize matching network design.

Applications

• PCN and PCS base station amplifiers
• TDMA cellular infrastructure equipment
• CDMA signal amplification stages
• Multicarrier amplifier systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm RoHS compliance status and lead plating thickness requirements prior to procurement. Ensure that the source material explicitly validates the exact part number variant being ordered, as suffixes may indicate differences in packaging or processing without altering functional characteristics.

Selection Notes

Select this component for broadband commercial and industrial applications requiring frequencies up to 2000 MHz. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance and maximum operating temperatures. Consider the device's ruggedness under load VSWR conditions when designing for high-power environments. Verify that the required gain and linearity metrics align with typical performance data provided in the technical specifications.

Part Context

This device belongs to the Freescale Semiconductor RF Power Field Effect Transistor family, specifically lateral N-channel MOSFETs optimized for wireless communication infrastructure. The product line targets high-performance amplifier designs where stability and linearity are critical. The manufacturer has transitioned to NXP Semiconductors, which continues to support these technologies for base station implementations.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics when evaluating potential replacements to ensure mechanical and electrical compatibility within the existing system architecture.

FAQ

What is the maximum drain-source voltage rating for the MRF19045LSR5?

The maximum drain-source voltage (VDSS) rating is -0.5 to +65 Vdc.

Is the MRF19045LSR5 internally matched?

Yes, the device is internally matched on both the input and output ports to ease use in amplifier designs.

What is the typical power gain at 1930 MHz?

The typical power gain is 14.9 dB at 1930 MHz with a 26 Vdc supply and 550 mA quiescent current.