ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V NI880S
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.93GHz
- Gain：11.5dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：750 mA
- Power - Output：90W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：NI-880S
- Supplier Device Package：NI-880S
- Configuration：-
Download product information
Overview
The MRF19090SR3 is a lateral N-channel RF power MOSFET designed for PCN and PCS base station applications operating between 1930 MHz and 1990 MHz. It delivers 90 W PEP output power at 26 Vdc with 10 dB gain and 35% drain efficiency. The device features internal input and output matching, integrated ESD protection, and high linearity suitable for CDMA, TDMA, GSM, and multicarrier amplifiers.
Feature Summary
- Internally matched for ease of use
- High gain, high efficiency, and high linearity
- Integrated ESD protection
- Designed for maximum gain and insertion phase flatness
Applications
- PCN and PCS base station applications
- CDMA amplifier applications
- TDMA amplifier applications
- GSM amplifier applications
- Multicarrier amplifier applications
Procurement Notes
Verify the exact part number suffix against official documentation to confirm package style and reel specifications. Confirm RoHS compliance status and check for any archived document revisions or lifecycle notices before procurement. Ensure compatibility with specified thermal management requirements.
Selection Notes
Select this component for high-power linear RF applications in the 1930-1990 MHz range. Consider its internal matching capabilities to simplify circuit design. Evaluate thermal resistance characteristics and ensure adequate heat sinking for continuous operation at specified power levels.
Part Context
This device belongs to the Freescale/NXP lateral N-channel enhancement-mode MOSFET family. It is specifically engineered for cellular communication infrastructure. The SR3 suffix indicates a specific tape and reel packaging configuration for automated assembly processes.
Replacement Considerations
Consult official archives for direct substitutes like MRF19090R3. Verify pinout compatibility and electrical parameter equivalence before substitution.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) rating is +65 Vdc.
Is the device internally matched?
Yes, the MRF19090SR3 is internally matched on both input and output ports.
What is the typical power gain at 90 W PEP?
The typical power gain is 10 dB to 11.5 dB at 90 W PEP output power.
