MRF1K50GNR5

Overview

The MRF1K50GNR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wideband RF power applications. It operates from 1.8 to 500 MHz with a maximum drain-source voltage of 133 Vdc and an operating voltage of 50 Vdc. The device delivers up to 1500 W CW output power at 98 MHz and 1500 W peak pulse power at 230 MHz. It features unmatched input and output designs, integrated ESD protection, and supports single-ended or push-pull configurations.

Feature Summary

• High drain-source avalanche energy absorption capability
• Unmatched input and output allowing wide frequency range utilization
• Integrated ESD protection with greater negative gate-source voltage range

Applications

• Industrial, Scientific, Medical (ISM) laser generation and plasma etching
• Radio broadcast and VHF TV broadcast
• VHF omnidirectional range (VOR) and HF/VHF communications
• VHF and UHF mobile radio base stations

Procurement Notes

Verify the specific ordering suffix R5 confirms the tape and reel packaging format containing 50 units on a 56 mm tape width and 13-inch reel. Confirm the GN designation indicates the gull-wing lead configuration suitable for surface mount assembly. Ensure compatibility with the OM-1230G-4L plastic package dimensions and thermal requirements during procurement.

Selection Notes

Select this component for linear applications requiring high ruggedness in high VSWR environments. It is characterized for operation from 30 to 50 V, making it versatile for various supply voltages. The device is suitable for Class C operation due to its extended negative gate-source voltage range. Consider the recommended MRFE6VS25N driver for optimal performance in common source amplifier configurations.

Part Context

This part belongs to NXP's wideband RF power LDMOS transistor family, specifically engineered for industrial and broadcast sectors. The MRF1K50GN variant shares core electrical characteristics with the MRF1K50N but differs in package termination style. It is designed to withstand extreme load mismatches without degradation, ensuring reliability in demanding aerospace and mobile radio infrastructure applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +133 Vdc.

Can the device be used in a push-pull configuration?

Yes, the device can be used in either single-ended or push-pull configurations.

What is the typical power gain at 98 MHz?

The typical power gain (Gps) at 98 MHz is 23.1 dB under continuous wave conditions.