MRF1K50HR5

Overview

The MRF1K50HR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET from the MRF1K50H series, manufactured by NXP USA Inc. It operates within a frequency range of 1.8 to 500 MHz and supports up to 1500 W CW output power at 50 Vdc. The device features an NI-1230H-4S package with integrated ESD protection. Electrical characteristics include a drain-source breakdown voltage of 135 Vdc and a gate-source voltage rating of -6.0 to +10 Vdc. Thermal resistance from junction to case is 0.10 °C/W under continuous wave conditions.

Feature Summary

• High drain-source avalanche energy absorption capability for robust operation
• Unmatched input and output design enabling wide frequency range utilization
• Suitable for linear applications with integrated ESD protection
• Capable of single-ended or push-pull configuration usage

Applications

• Industrial, scientific, and medical (ISM) systems including laser generation and plasma etching
• Radio and VHF TV broadcast transmitters
• Sub-GHz aerospace communications and weather radar
• Mobile radio base stations operating in VHF and UHF bands

Procurement Notes

Verify the R5 suffix indicates a reel quantity of 50 units on a 56 mm tape width. Confirm the specific package designation matches NI-1230H-4S requirements. Ensure compatibility with recommended driver MRFE6VS25N. Check RoHS compliance status against current manufacturing standards. Validate supply availability through authorized NXP channels due to product longevity program constraints.

Selection Notes

Select this component for designs requiring high ruggedness and wideband performance across 1.8 to 500 MHz. Consider the thermal management capabilities provided by the NI-1230H-4S package for high power dissipation. Evaluate the need for linear operation versus Class C efficiency based on application requirements. Verify that the 50 Vdc operating voltage aligns with system power supply specifications. Assess the suitability for high VSWR environments given the device's avalanche energy rating.

Part Context

This part belongs to the MRF1K50H family of RF power LDMOS transistors designed for high-power industrial and broadcast applications. The HR5 variant specifically denotes the reel packaging format containing 50 units. It shares core electrical and thermal characteristics with the standard MRF1K50H device but differs in shipping configuration. The family is characterized by its ability to handle extreme load mismatches without degradation.

Replacement Considerations

MRF1K50N is available as a lower thermal resistance alternative within the same family.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 135 Vdc.

Can the device operate in a push-pull configuration?

Yes, the device can be used in either single-ended or push-pull configurations.

What is the typical power gain at 230 MHz pulse operation?

The typical power gain is 23.7 dB at 230 MHz with a 100 µsec pulse width and 20% duty cycle.