MRF1K50NR5

Overview

The MRF1K50NR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wideband RF power applications from 1.8 to 500 MHz. It delivers 1500 W CW output at 98 MHz and 1500 W peak pulse output at 230 MHz with a 50 Vdc operating voltage. The device features unmatched input and output ports, integrated ESD protection, and supports both single-ended and push-pull configurations.

Feature Summary

• High drain-source avalanche energy absorption capability
• Unmatched input and output design enabling wide frequency range utilization
• Integrated ESD protection with extended negative gate-source voltage range

Applications

• Industrial, Scientific, Medical (ISM) laser generation and plasma etching
• Radio broadcast and VHF TV broadcast systems
• Aerospace VHF omnidirectional range (VOR) and weather radar
• Mobile radio VHF and UHF base stations

Procurement Notes

Verify the R5 suffix indicates a reel quantity of 50 units on a 56 mm tape width. Confirm package type OM-1230-4L matches system requirements. Ensure driver compatibility with MRFE6VS25N. Validate thermal management specifications against application constraints.

Selection Notes

Select this component for high-power broadband amplification requiring extreme ruggedness under high VSWR conditions. Suitable for linear applications across sub-GHz frequencies. Verify suitability for Class C operation due to enhanced negative gate-source voltage tolerance. Consider thermal resistance characteristics for heat sink design.

Part Context

This part belongs to NXP's Wideband RF Power LDMOS Transistors series. It complements other high-power devices like the MRF101 and MRF300AN families but offers significantly higher power density in the 1.8–500 MHz range. Designed for industrial and broadcast environments demanding reliability.

Replacement Considerations

MRF1K50GN serves as the gull-wing leaded variant of the same die and electrical specification. No direct cross-brand substitutes are documented in official sources.

FAQ

What is the maximum junction temperature rating?

The operating junction temperature range extends up to +225 °C.

How does the device handle load mismatch?

It withstands VSWR greater than 65:1 at all phase angles without degradation when subjected to 15 W peak drive at 230 MHz.

Is the device suitable for Class C operation?

Yes, it features integrated ESD protection with a greater negative gate-source voltage range specifically to improve Class C operation.