MRF21030LR3

Overview

The MRF21030LR3 is a lateral N-channel RF power field-effect transistor manufactured by Freescale Semiconductor. It utilizes LDMOS technology and is housed in an NI-400 package. The device operates with a test voltage of 28 V and a rated voltage of 65 V. It delivers 30 W of output power at a frequency of 2.14 GHz, providing a gain of 13 dB under test conditions of 250 mA.

Feature Summary

• Lateral N-channel LDMOS construction for RF power amplification
• Designed for high-frequency operation at 2.14 GHz
• NI-400 surface-mount packaging

Applications

• RF power amplification circuits
• Wireless communication systems
• Broadband amplifier modules

Procurement Notes

Verify the manufacturer part number against official Freescale or NXP documentation to confirm authenticity. Check RoHS compliance status and moisture sensitivity level before integration. Ensure the NI-400 package dimensions match the design footprint. Confirm current availability and obsolescence status through authorized channels.

Selection Notes

Select this component for applications requiring 30 W output power at 2.14 GHz. Consider the 65 V rated voltage and 28 V test voltage limits during circuit design. Evaluate thermal management requirements for the NI-400 package. Compare gain specifications against system requirements.

Part Context

This component belongs to the MRF21 series of RF power FETs from Freescale Semiconductor. These devices are engineered for radio frequency applications, offering specific performance characteristics for signal amplification. The LR3 suffix typically denotes a specific tape and reel packaging configuration within the product line.

Replacement Considerations

Consult official replacement guides for direct substitutes. Verify pin compatibility and electrical parameters such as voltage ratings and output power when considering alternative components.