MRF21045LR3

$35.62

Description：RF MOSFET LDMOS 28V NI400
Series：-

SKU:3a2e9c552fb8 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI400
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.17GHz
Gain：15dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：500 mA
Power - Output：10W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：NI-400
Supplier Device Package：NI-400-240
Configuration：-

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MRF21045LR3

Overview

The MRF21045LR3 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It provides a typical drain efficiency of 23.5% and power gain of 15 dB at 28 Vdc with 10 Watts average output power in two-carrier W-CDMA mode. The device supports up to 45 Watts CW output power, features internal input and output matching networks, and includes integrated ESD protection.

Feature Summary

Internally matched for ease of use
High gain, high efficiency and high linearity
Integrated ESD protection
Designed for maximum gain and insertion phase flatness

Applications

W-CDMA base station applications
TDMA amplifier applications
CDMA amplifier applications
Multicarrier amplifier applications

Procurement Notes

Verify the component status carefully as this part has reached its end-of-life stage. The datasheet indicates a Last Order date of July 1, 2011, and a final shipment deadline of June 30, 2012. Confirm availability through authorized distributors or secondary market suppliers, as standard manufacturing supply chains no longer support new orders for this specific Freescale Semiconductor product.

Selection Notes

Select this component for RF power amplification within the 2110 to 2170 MHz frequency range. Ensure the design accommodates a 28 Vdc drain supply voltage and a quiescent current of 500 mA. Verify that the NI-400 package thermal characteristics align with the system's heat dissipation requirements, specifically considering the junction-to-case thermal resistance of 1.65 °C/W.

Part Context

This device belongs to the MRF21 series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor. It utilizes Lateral DMOS technology optimized for cellular radio and wireless local loop applications. The LR3 suffix denotes the tape and reel packaging format containing 250 units per 32 mm, 13-inch reel.