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Product Detailed Parameters
- Description：RF MOSFET 28V NI780
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Frequency：2.11GHz ~ 2.17GHz
- Gain：13.6dB
- Voltage - Test：28 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：1:00 AM
- Power - Output：90W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：N-Channel
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Overview
The MRF21085R3 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 19 Watts average output power with a typical gain of 13.6 dB and drain efficiency of 23% at 28 Volts. The device features integrated ESD protection, internal matching, and excellent thermal stability.
Feature Summary
- Internally matched for ease of use
- High gain, high efficiency, and high linearity
- Integrated ESD protection
- Designed for maximum gain and insertion phase flatness
Applications
- W-CDMA base station amplifiers
- TDMA amplifier applications
- CDMA amplifier applications
- Multicarrier amplifier applications
Procurement Notes
Verify the specific suffix 'R3' indicates tape and reel packaging containing 250 units on a 56 mm reel. Confirm RoHS compliance status and check for lead plating thickness variations if the 'L' suffix is present in alternative part numbers. Ensure compatibility with Class AB operation requirements.
Selection Notes
Select this component for designs requiring high linearity and efficiency in the 2110–2170 MHz band. Consider its capability to handle 5:1 VSWR and suitability for PCS/cellular radio and WLL applications when evaluating system robustness and performance needs.
Part Context
This device belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is characterized using series equivalent large-signal impedance parameters. The manufacturer has transitioned to NXP Semiconductors, which continues to support these legacy RF components.
Replacement Considerations
MRF21085LSR3 is listed as a similar part number from Motorola/Freescale. Verify electrical equivalence and package compatibility before substitution.
FAQ
What is the typical power gain of the MRF21085R3?
The typical power gain is 13.6 dB under standard test conditions.
Is the MRF21085R3 suitable for multicarrier applications?
Yes, it is explicitly designed for TDMA, CDMA, and multicarrier amplifier applications.
Does the MRF21085R3 include ESD protection?
Yes, the device features integrated ESD protection.
