MRF24300GNR3

Overview

The MRF24300GNR3 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It operates at a frequency of 2450 MHz with a continuous wave output power of 300 W. The device utilizes silicon technology and features an N-channel configuration. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source voltage range of -6 V to +10 V, and a threshold voltage of 2 V. It delivers a gain of 13.1 dB with a maximum power dissipation of 833 W. The component supports surface-mount installation in the OM-780-2L package and functions within a temperature range of -40 C to +150 C.

Feature Summary

• High-power RF performance utilizing LDMOS silicon technology for robust signal amplification
• Designed for operation at 2450 MHz with significant output power capabilities
• Surface-mount construction suitable for automated assembly processes

Applications

• Wireless local area network (WLAN) infrastructure base stations
• Industrial, scientific, and medical (ISM) band equipment
• Bluetooth and Zigbee access point transmitters

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions maintain moisture sensitivity levels appropriate for surface-mount devices. Validate package integrity upon receipt to prevent thermal interface issues during soldering.

Selection Notes

Evaluate thermal management requirements carefully given the high power dissipation rating. Compare gain specifications against system link budget needs at the target operating frequency. Assess package compatibility with existing printed circuit board layouts. Consider lifetime status as the product may be discontinued or subject to supply limitations.

Part Context

This component belongs to the MRF24300 series of radio frequency power transistors from NXP Semiconductors. The series targets applications requiring reliable amplification in the 2.4 GHz ISM band. These devices are engineered for cellular infrastructure and industrial communication systems where high linearity and efficiency are critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.