MRF323

Overview

The MRF323 is an NPN silicon RF power transistor designed for wideband large-signal driver and predriver amplifier stages in the 200–500 MHz frequency range. It guarantees performance at 400 MHz with a 28 V supply, delivering 20 W output power, a minimum power gain of 10 dB, and a minimum efficiency of 50%. The device features computer-controlled wirebonding for consistent input impedance and utilizes a gold metallization system for high reliability.

Feature Summary

• Computer-controlled wirebonding ensures consistent input impedance
• Gold metallization system provides high reliability
• Guaranteed performance under load mismatch conditions

Applications

• Wideband large-signal driver amplifier stages
• Predriver amplifier stages
• Military communication equipment operating in the 200-500 MHz range

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V1) to ensure alignment with current design specifications. Confirm that the application environment does not involve medical or life-sustaining systems, as these uses are explicitly excluded from warranty coverage. Ensure proper thermal management and impedance matching networks are implemented to maintain the guaranteed 30:1 VSWR tolerance during operation.

Selection Notes

Select this component when designing amplifiers requiring 20 W output power within the 200–500 MHz band. It is suitable for applications demanding high reliability through gold metallization and robust performance under varying load conditions. Consider the CASE 244-04 package style for mechanical integration and verify that the 28 V supply voltage aligns with the system architecture.

Part Context

The MRF323 belongs to MACOM's RF Line of NPN silicon power transistors. This series targets military communication equipment and wideband amplifier designs. The device complements other models in the lineup by offering specific power and frequency characteristics optimized for driver and predriver stages rather than final output stages.

Replacement Considerations

Check for updated revisions such as Rev. V1 to confirm continuity. Evaluate alternative NPN silicon RF power transistors from MACOM or other manufacturers if different power levels or frequency ranges are required. Verify pinout compatibility and thermal resistance values before substituting.