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The MRF373ALR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications in the 470 to 860 MHz frequency range. It provides 75 Watts of output power at 860 MHz with a drain efficiency of 60% under typical conditions (VDD = 32 V, IDQ = 200 mA). The device features a Drain-Source Voltage rating of 70 Vdc and operates within a junction temperature range up to 200°C. It utilizes the NI-360 package (Case 360B-05) and includes integrated ESD protection.
Verify component authenticity through authorized channels due to the 'Not Recommended for New Design' status. Confirm that the specific ordering suffix matches the required reel quantity and lead plating specifications. Ensure compatibility with existing NI-360 footprints during procurement planning.
Select this component for designs requiring high gain and broadband performance between 470 and 860 MHz. Consider the 32 V operating voltage requirement and the specific thermal resistance characteristics when designing heat dissipation solutions. Validate input and output matching networks using the provided series equivalent impedance data.
This part belongs to the RF Power Field Effect Transistors family from Freescale Semiconductor. It is specifically engineered for use in 28/32 volt transmitter equipment where high power gain and broadband capabilities are essential for signal amplification.
MRF373ALSR1
The maximum Drain-Source Voltage (VDSS) rating is +70 Vdc.
Yes, the MRF373ALR1 features integrated ESD protection characterized by Human Body Model Class 1 and Machine Model M2 ratings.
The typical Common Source Power Gain (Gps) is 18.2 dB at 860 MHz with 75 Watts CW output power.