MRF373ALR1

MRF373ALR1

$41.29
  • Description:RF MOSFET LDMOS 32V NI360
  • Series:-

SKU:8b8dd5e732cf Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:18.2dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:75W
  • Voltage - Rated:70 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360
  • Supplier Device Package:NI-360
  • Configuration:-

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MRF373ALR1

Overview

The MRF373ALR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications in the 470 to 860 MHz frequency range. It provides 75 Watts of output power at 860 MHz with a drain efficiency of 60% under typical conditions (VDD = 32 V, IDQ = 200 mA). The device features a Drain-Source Voltage rating of 70 Vdc and operates within a junction temperature range up to 200°C. It utilizes the NI-360 package (Case 360B-05) and includes integrated ESD protection.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • Excellent thermal stability
  • Characterized with series equivalent large-signal impedance parameters

Applications

  • Broadband commercial transmitter equipment
  • Industrial transmitter equipment
  • Large-signal common source amplifier applications

Procurement Notes

Verify component authenticity through authorized channels due to the 'Not Recommended for New Design' status. Confirm that the specific ordering suffix matches the required reel quantity and lead plating specifications. Ensure compatibility with existing NI-360 footprints during procurement planning.

Selection Notes

Select this component for designs requiring high gain and broadband performance between 470 and 860 MHz. Consider the 32 V operating voltage requirement and the specific thermal resistance characteristics when designing heat dissipation solutions. Validate input and output matching networks using the provided series equivalent impedance data.

Part Context

This part belongs to the RF Power Field Effect Transistors family from Freescale Semiconductor. It is specifically engineered for use in 28/32 volt transmitter equipment where high power gain and broadband capabilities are essential for signal amplification.

Replacement Considerations

MRF373ALSR1

FAQ

What is the maximum Drain-Source Voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is +70 Vdc.

Does the device include ESD protection?

Yes, the MRF373ALR1 features integrated ESD protection characterized by Human Body Model Class 1 and Machine Model M2 ratings.

What is the typical power gain at 860 MHz?

The typical Common Source Power Gain (Gps) is 18.2 dB at 860 MHz with 75 Watts CW output power.

MRF373ALR1MRF373ALR1
$41.29
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