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Product Detailed Parameters
- Description：RF MOSFET LDMOS 32V NI360
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：860MHz
- Gain：18.2dB
- Voltage - Test：32 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：200 mA
- Power - Output：75W
- Voltage - Rated：70 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-360
- Supplier Device Package：NI-360
- Configuration：-
Download product information
Overview
The MRF373ALR5 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It delivers 75 Watts of output power at 860 MHz with a drain efficiency of 60% under typical conditions (VDD = 32 V, IDQ = 200 mA). The device features a Drain-Source Voltage rating of 70 Vdc and supports up to 10:1 VSWR at full rated power. Thermal resistance from junction to case is 0.89 °C/W.
Feature Summary
- Integrated electrostatic discharge protection
- Excellent thermal stability characteristics
- Characterized using series equivalent large-signal impedance parameters
Applications
- Large-signal common source amplifier applications
- Broadband commercial transmitter equipment
- Industrial transmitter equipment
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm component availability status as this part may be discontinued or not recommended for new designs. Ensure compliance with RoHS requirements and lead plating thickness specifications during procurement.
Selection Notes
Select this component for high-power RF amplification in the 470 to 860 MHz range. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance. Verify that the system can provide the required 32 Vdc supply voltage and bias current for optimal performance.
Part Context
This device belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is categorized as an N-Channel Enhancement-Mode Lateral MOSFET. The product data sheet provides detailed electrical characteristics and test circuit layouts for design implementation.
Replacement Considerations
MRF373ALSR1
FAQ
What is the maximum Drain-Source Voltage rating?
The maximum Drain-Source Voltage (VDSS) rating is +70 Vdc.
Does the device include ESD protection?
Yes, the device includes integrated electrostatic discharge protection.
What is the typical power gain at 860 MHz?
The typical Common Source Power Gain (Gps) is 18.2 dB at 860 MHz with 75 W CW output power.
