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The MRF373ALSR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It delivers 75 Watts of output power with 18.2 dB of power gain at 860 MHz under 32 Volts DC bias. The device features integrated ESD protection, excellent thermal stability, and RoHS compliance. It utilizes the NI-360S package and is supplied in tape and reel format.
Verify component authenticity through authorized channels. Confirm datasheet revision status as the device is not recommended for new designs. Ensure proper handling procedures are followed due to the surface mount packaging type.
Evaluate thermal resistance characteristics against system cooling requirements. Verify impedance matching network compatibility with the specified source and load impedances. Confirm operational voltage limits align with the 32 Volt supply design.
This component belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is specifically engineered for high-gain, broadband performance in VHF/UHF frequency ranges. The product line targets robust performance in demanding RF power amplification scenarios.
Consult official documentation for direct substitutes. Evaluate alternative LDMOS devices within the same manufacturer portfolio that meet identical frequency and power specifications.