MRF373R1

Overview

The MRF373R1 is an RF Power Field-Effect Transistor manufactured by Freescale Semiconductor. Designed for broadband commercial and industrial applications, it operates within the frequency range of 470 to 860 MHz. The device is optimized for large-signal, common source amplifier applications in 32-volt transmitter equipment. It features internal input and output matching to simplify circuit design and includes integrated ESD protection. The component is characterized with series equivalent large-signal impedance parameters and demonstrates excellent thermal stability.

Feature Summary

• Broadband performance suitable for frequencies from 470 to 860 MHz
• Internally matched input and output circuits for ease of use
• Integrated electrostatic discharge (ESD) protection
• Excellent thermal stability

Applications

• Large-signal common source amplifier applications
• 32 volt digital television transmitter equipment
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify the specific suffix R1 against official datasheets to confirm packaging details, as suffixes often denote reel quantities or tape specifications. Ensure the sourcing channel provides original manufacturer documentation to validate RoHS compliance and authenticity. Cross-reference the part number with current NXP product status, as legacy Freescale components may have transitioned to different manufacturing lines or obsolescence statuses.

Selection Notes

Select this component for designs requiring high gain and broadband operation in the UHF spectrum. It is ideal for applications needing simplified matching networks due to internal matching. Consider the 32-volt operating requirement and thermal management needs associated with its power capabilities. Verify that the application environment aligns with its specified frequency range and impedance characteristics.

Part Context

This device belongs to the RF Power MOSFET line designed for robust performance in transmitter systems. It serves as a key active component in signal amplification stages where wide bandwidth and efficiency are critical. The technology leverages lateral N-channel architecture to deliver reliable power handling in demanding broadcast and industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.