MRF374A

Overview

The MRF374A is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It features a drain-source breakdown voltage of 70 Vdc, a total device dissipation of 302 W at 25°C case temperature, and a junction-to-case thermal resistance of 0.58 °C/W. The component utilizes the NI-650 package (Case 375F-04) with Style 1 pin configuration.

Feature Summary

• Integrated electrostatic discharge protection
• Excellent thermal stability characteristics
• Characterized using differential large-signal impedance parameters

Applications

• Broadband commercial transmitter equipment
• Industrial transmitter equipment
• Large-signal common source amplifier applications

Procurement Notes

Verify the current manufacturer status as Freescale Semiconductor products transitioned to NXP Semiconductors. Confirm RoHS compliance details and check for any specific environmental declarations or REACH SVHC information relevant to the production batch before procurement.

Selection Notes

Select this component for wideband RF power amplification requiring high gain across the 470 to 860 MHz spectrum. Ensure the design accommodates the 28/32 volt supply requirements and provides adequate thermal management given the 302 W dissipation rating and 0.58 °C/W thermal resistance.

Part Context

This part belongs to the MRF37 series of RF Power LDMOS Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. It is specifically engineered for high-power, broadband applications in the UHF band, offering robust performance in demanding transmitter environments.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers from the same manufacturer family.