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Product Detailed Parameters
- Description：RF TRANS NPN 35V 211-11
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：35V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：13dB
- Power - Max：150W
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5A, 5V
- Current - Collector (Ic) (Max)：20A
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：211-11, Style 2
- Supplier Device Package：211-11, Style 2
- Grade：-
- Qualification：-
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Overview
The MRF422 is an NPN silicon power transistor designed for high-power linear amplifier applications from 2 to 30 MHz. It delivers a peak envelope power (PEP) output of 150 W at 30 MHz with a minimum gain of 10 dB and efficiency of 40%. The device operates at a specified voltage of 28 V and features intermodulation distortion of -30 dB (min.) at full power. It is housed in Case 211-11, Style 1, and undergoes 100% testing for load mismatch at all phase angles with a 30:1 VSWR.
Feature Summary
- Designed primarily for high-power linear amplification across the 2 to 30 MHz frequency range.
- Capable of delivering 150 W PEP output with a minimum gain of 10 dB at 30 MHz.
- Ensures reliability through 100% testing for load mismatch at all phase angles with a 30:1 VSWR.
Applications
- High power linear amplifiers
- Avionics systems
- Communications equipment
- Radar systems
Procurement Notes
Verify component authenticity by cross-referencing the MACOM datasheet revision V2 and part number MRF422. Confirm package style matches Case 211-11, Style 1. Ensure handling procedures account for static sensitivity and thermal characteristics during installation.
Selection Notes
Select the MRF422 for applications requiring high linearity and significant output power within the HF band up to 30 MHz. Consider the 290 W total device dissipation and 0.6°C/W thermal resistance for adequate heat sinking. Verify that the operating voltage aligns with the specified 28 V requirement.
Part Context
The MRF422 belongs to the MACOM RF Line series of NPN silicon power transistors. This series targets demanding RF power applications, offering robust performance in linear modes. The component is distinct from MACOM's bipolar RF transistors used in higher frequency ranges, focusing instead on lower frequency, high-power linear amplification.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM directly for potential alternatives or updated series replacements.
FAQ
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage rating is 40 V.
How is the MRF422 tested for reliability?
The device is 100% tested for load mismatch at all phase angles with a 30:1 VSWR.
What is the typical collector efficiency at rated power?
The typical collector efficiency is 45% when operating at 150 W PEP and 30 MHz.
