MRF422MP

MRF422MP

$165.75
  • Description:RF TRANS NPN 40V 30MHZ 211-11
  • Series:-

SKU:08f457eb874f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 40V 30MHZ 211-11
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Frequency - Transition:30MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:10dB ~ 13dB
  • Power - Max:290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5A, 5V
  • Current - Collector (Ic) (Max):20A
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:211-11, Style 1
  • Supplier Device Package:211-11, Style 1
  • Grade:-
  • Qualification:-

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MRF422MP

Overview

The MRF422MP is a matched pair of RF bipolar transistors manufactured by MACOM Technology Solutions. Designed for high-power linear amplifier applications, this component operates within the frequency range of 2 MHz to 30 MHz. It utilizes silicon technology and is housed in a CASE211-11 package. The device is rated for 150W PEP output power with a 30V supply voltage. Key electrical characteristics include a minimum gain of 14 dB and a third-order intercept point (IP3) of 47 dBm at 28V. The unit is RoHS compliant and classified under EAR99.

Feature Summary

  • Matched pair configuration ensures balanced performance for push-pull amplifier topologies
  • High power handling capability suitable for demanding RF transmission environments
  • Optimized linearity metrics support complex modulation schemes in broadcast applications

Applications

  • High-power linear amplifiers for AM/FM broadcast stations
  • Shortwave radio transmission systems
  • Military communication equipment requiring robust RF power stages

Procurement Notes

Verify the specific suffix designation against the manufacturer's current datasheet to confirm pinout compatibility and thermal specifications. Ensure that the procurement channel provides traceability documentation for military or aerospace grade variants if required by the end application standards.

Selection Notes

Select this component when designing amplifiers operating below 30 MHz that require symmetrical drive characteristics. Compare the thermal resistance values in the datasheet against the proposed heatsink design to ensure junction temperatures remain within safe operating limits during continuous wave operation.

Part Context

This part belongs to MACOM's portfolio of RF bipolar transistors tailored for VHF and HF bands. It serves as a critical active element in power amplifier modules where high efficiency and linearity are prioritized over miniaturization, distinguishing it from lower-power LDMOS or GaN alternatives used in higher frequency cellular infrastructure.

Replacement Considerations

Direct substitutes may include other matched pairs from the same family such as the MRF455MP, though voltage and power ratings differ. Verify case outline dimensions and internal matching networks before substitution to maintain circuit stability.

MRF422MPMRF422MP
$165.75
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