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Product Detailed Parameters
- Description：RF TRANS NPN 50V 211-11
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：50V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：15dB
- Power - Max：150W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 5A, 5V
- Current - Collector (Ic) (Max)：16A
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：211-11, Style 2
- Supplier Device Package：211-11, Style 2
- Grade：-
- Qualification：-
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Overview
The MRF429 is an NPN silicon RF power transistor designed for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. It features a 50 V collector-emitter breakdown voltage and delivers 150 W (PEP) output power at 30 MHz with a minimum gain of 13 dB and efficiency of 45%. The device exhibits intermodulation distortion of -32 dB maximum at 150 W PEP. It includes diffused emitter resistors for superior ruggedness and is 100% tested for load mismatch at all phase angles with a 30:1 VSWR at 150 W CW.
Feature Summary
- Diffused emitter resistors provide superior ruggedness against load mismatches.
- High-voltage design optimized for linear amplification in the 2.0 to 30 MHz range.
- Validated performance under severe load conditions with 30:1 VSWR testing.
Applications
- Marine communication equipment
- Base station linear amplifiers
- High-power RF amplification systems
Procurement Notes
Verify the specific manufacturer source, as multiple vendors including MACOM, Motorola, and TE Connectivity produce this part number. Confirm package style compatibility, noting that MACOM typically uses CASE 211-11 Style 1. Ensure the datasheet revision matches your design requirements, as specifications may vary slightly between original and secondary sources.
Selection Notes
Select the MRF429 when designing linear amplifiers requiring 150 W output power within the 2.0 to 30 MHz band. The 50 V rating suits high-voltage supply architectures. Consider its ruggedness features if operating in environments prone to antenna mismatches or variable load impedances.
Part Context
The MRF429 belongs to the RF Line series of NPN silicon power transistors manufactured by MACOM Technology Solutions. This series targets high-power linear amplification needs in the HF and lower VHF spectrum bands, specifically supporting marine and base station infrastructure applications.
Replacement Considerations
MRF428
FAQ
What is the maximum intermodulation distortion specified for the MRF429?
The maximum intermodulation distortion is -32 dB at 150 W PEP.
Is the MRF429 tested for load mismatch conditions?
Yes, it is 100% tested for load mismatch at all phase angles with a 30:1 VSWR at 150 W CW.
What is the primary frequency range for the MRF429?
It is designed primarily for operation from 2.0 to 30 MHz.
