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Product Detailed Parameters
- Description：RF TRANS NPN 20V 8-SOIC
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：20dB
- Power - Max：1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 10mA, 5V
- Current - Collector (Ic) (Max)：400mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The MRF4427G is an RF NPN silicon bipolar transistor manufactured by Microchip Technology, formerly Microsemi. Designed for general RF amplifier applications in the very high frequency band, this component features a small outline surface-mount package with eight gull-wing terminals. It operates with a maximum collector-emitter voltage of 18 V and supports a maximum collector current of 0.4 A. The device utilizes silicon as its primary semiconductor material and is suitable for discrete low-power RF and microwave circuit implementations.
Feature Summary
- NPN silicon construction optimized for RF signal amplification
- Surface-mount packaging for automated assembly integration
- Designed for general-purpose RF amplifier topologies
Applications
- General RF amplifier circuits
- Microwave discrete component designs
- Very high frequency signal processing
Procurement Notes
Verify the manufacturer designation carefully, as the part is currently produced under Microchip Technology following the acquisition of Microsemi assets. Confirm the specific datasheet revision to ensure compatibility with your design requirements. Check for RoHS compliance status and environmental certifications before finalizing procurement orders.
Selection Notes
Select this component when a low-power NPN silicon bipolar transistor is required for VHF band operations. Ensure the application voltage does not exceed the 18 V collector-emitter rating. Consider the 0.4 A current limit and thermal dissipation capabilities inherent to the small outline package during PCB layout planning.
Part Context
This component belongs to the category of RF and microwave discrete transistors. It serves as a fundamental active element for amplifying radio frequency signals within electronic systems requiring very high frequency performance. The technology represents standard silicon bipolar junction transistor architecture adapted for RF specifications.
Replacement Considerations
Consult official Microchip Technology documentation for verified cross-reference data. No public substitute part numbers are confirmed in the available reference materials.
