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Product Detailed Parameters
- Description：RF TRANS NPN 20V 4GHZ TO-39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：4GHz
- Noise Figure (dB Typ @ f)：-
- Gain：9dB ~ 10dB
- Power - Max：2.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 60mA, 10V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The MRF517 is an NPN silicon RF bipolar transistor designed for VHF and UHF applications. It features a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 150mA. The device operates up to 4GHz with a minimum current-gain bandwidth product of 3GHz at 60mA. Typical power gain is 10dB at 60mA and 300MHz. It is housed in a TO-39 through-hole package and dissipates 2.5W.
Feature Summary
- Silicon NPN construction optimized for VHF and UHF discrete low-power applications
- High-frequency performance with a 3GHz minimum current-gain bandwidth product
- Robust thermal management capability within a standard TO-39 through-hole package
Applications
- VHF and UHF equipment amplification stages
- Low-power RF amplifier circuits
- Microwave discrete component designs
Procurement Notes
Verify the specific manufacturer source, as Microsemi Corporation has undergone corporate restructuring and acquisition by Microchip Technology. Confirm whether the available inventory represents original Microsemi stock or Microchip-produced equivalents. Check for End-of-Life (EOL) notifications or discontinuance notices associated with the original Microsemi part number before finalizing procurement plans.
Selection Notes
Select this component for linear RF amplification tasks requiring operation within the VHF and UHF spectrum. Ensure the design accommodates the 20V collector-emitter voltage limit and 150mA current rating. Consider the TO-39 package constraints for thermal dissipation and mounting requirements when integrating into the circuit board layout.
Part Context
This component belongs to the family of RF and microwave discrete low-power transistors. It serves as a specialized active element for frequency conversion and signal amplification in communication systems. The device bridges the gap between general-purpose logic transistors and high-power RF devices, targeting niche frequency bands.
Replacement Considerations
Microchip Technology acquired Microsemi; verify if Microchip offers direct cross-references. Consult official datasheets for pin-compatible alternatives with matching electrical characteristics such as breakdown voltage and gain bandwidth.
FAQ
What is the maximum operating frequency of the MRF517?
The MRF517 is rated for operation up to 4GHz.
What is the typical power gain specification?
The typical power gain is 10dB measured at 60mA bias current and 300MHz frequency.
