MRF5812G

Overview

The MRF5812G is an NPN silicon RF transistor manufactured by Microsemi Corporation, designed for high-frequency applications up to 5 GHz. It features a maximum collector-emitter breakdown voltage of 15V and a maximum collector current of 200mA. The device delivers a power output of 1.25W with a DC current gain (hFE) of at least 50 at 50mA and 5V. Gain ranges from 13dB to 15.5dB, while the noise figure typically falls between 2dB and 3dB at 500MHz. It is housed in an 8-SOIC surface-mount package.

Feature Summary

• Designed for high-current low-power amplifier applications in the ultra-high frequency band
• Incorporates fine line geometry arsenic emitters and gold top metallization for performance
• Features nichrome thin-film ballasting resistors integrated within the structure
• Optimized for low noise and low intermodulation distortion characteristics

Applications

• High-frequency low-noise amplification stages
• Ultra-high frequency signal processing circuits
• Low-power RF amplifier designs

Procurement Notes

Verify component authenticity through authorized channels as the part status is discontinued. Confirm package integrity and pin alignment against the 8-SOIC specification before integration. Review manufacturer change notices for any historical revisions that may affect compatibility. Ensure storage conditions adhere to moisture sensitivity level 1 requirements to prevent damage prior to soldering.

Selection Notes

Select this component when designing circuits requiring NPN RF transistors with 15V breakdown and 5GHz transition frequency. Compare gain and noise specifications against system requirements for low-noise amplification. Evaluate thermal management needs for 1.25W power dissipation in the 8-SOIC package. Consider availability constraints due to discontinued status when planning long-term production.

Part Context

The MRF5812G belongs to the RF small-signal bipolar transistor category, specifically engineered for ultra-high frequency bands. It shares design lineage with Motorola/NXP MRF5812 series components, utilizing similar fine-line geometry technologies. The device serves as a discrete semiconductor solution for RF front-end modules where low noise and moderate power handling are critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference tools or manufacturer databases for parametrically equivalent alternatives suitable for discontinuation replacement.