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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5GHZ 8-SOIC
- Series：-
- Mfr：Microsemi Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：2dB ~ 3dB @ 500MHz
- Gain：13dB ~ 15.5dB
- Power - Max：1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 50mA, 5V
- Current - Collector (Ic) (Max)：200mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The MRF5812GR1 is an NPN silicon RF transistor designed for low power, low noise amplifiers operating up to 1.0 GHz. It features a current-gain bandwidth product (Ftau) of 5.0 GHz at 10V and 75mA. The device provides a minimum noise figure of 2.0 dB and a gain of 15.5 dB at 500 MHz. Key electrical specifications include a collector-emitter breakdown voltage of 15 Vdc, a maximum collector current of 200 mA, and a total device dissipation of 1.25 Watts at 25°C case temperature. It utilizes a cost-effective SO-8 surface mount package.
Feature Summary
- Optimized for high current, low power, and low noise amplifier applications
- Provides high frequency performance with a 5.0 GHz transition frequency
- Utilizes a compact and cost-effective SO-8 surface mount package
Applications
- Low noise amplifiers (LNA)
- General purpose RF amplification
- Low power RF power amplifiers
Procurement Notes
Verify the component manufacturer as Advanced Power Technology, not Microsemi Corporation. Confirm the R1 suffix indicates tape and reel packaging containing 500 units. Ensure the G suffix is present if lead-free terminal finish and RoHS compliance are required for the specific procurement order.
Selection Notes
Select this component for designs requiring low noise figures around 2.0 dB at 500 MHz. Verify that the 15 V collector-emitter voltage rating and 200 mA maximum collector current meet the circuit requirements. Consider the SO-8 package dimensions for PCB layout constraints and ensure thermal management supports the 1.25 W dissipation limit.
Part Context
The MRF5812GR1 belongs to the MRF5812 series manufactured by Advanced Power Technology. The 'G' suffix denotes RoHS compliance and lead-free terminals, while 'R1' specifies tape and reel packaging with 500 units per reel. This part is distinct from similar models like the MRF581 or MRF5812G in terms of specific packaging and environmental compliance details.
Replacement Considerations
The datasheet lists the MRF581A as a similar NPN silicon RF transistor within the same family. Verify compatibility regarding pinout configuration, package type, and specific electrical parameters before substitution.
