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Product Detailed Parameters
- Description：TRANS NPN 15V 200MA
- Series：-
- Mfr：Microsemi Corporation
- Package：Tape & Reel (TR)
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MRF5812MR1 is an NPN silicon RF small-signal bipolar transistor designed for high-frequency applications up to 1.0 GHz. It features a maximum collector current of 0.2 A and a collector-emitter voltage rating of 15 V. The device utilizes a surface-mount package with eight terminals, specifically identified as R-PDSO-G8. Key electrical characteristics include a minimum DC current gain (hFE) of 30 and a transition frequency of 5.0 GHz at 10 V and 75 mA. The component is constructed using arsenic emitters and nichrome thin-film ballasting resistors to ensure performance stability.
Feature Summary
- Designed for low noise amplification in ultra-high frequency bands
- Incorporates state-of-the-art technology with arsenic emitters
- Features nichrome thin-film ballasting resistors for thermal stability
- Optimized for high gain and excellent dynamic range
Applications
- High current low power amplifiers
- Low noise amplifier stages in RF circuits
- Ultra-high frequency signal processing
Procurement Notes
Verify the exact manufacturer designation, as the MRF5812 series has been produced by multiple entities including Motorola, Microsemi, and Qorvo. Confirm RoHS compliance status and specific suffix requirements against the original datasheet. Ensure the supplier provides valid traceability documentation for this discrete semiconductor component.
Selection Notes
Select this component for designs requiring low noise figures around 2.0 dB to 2.5 dB at 500 MHz. Consider the 8-terminal SOIC package for surface mount assembly constraints. Evaluate the 15 V breakdown voltage and 0.2 A current limits against the specific circuit load requirements to ensure safe operating area compliance.
Part Context
This part belongs to the MRF58xx family of NPN silicon high-frequency transistors. These devices are engineered for cost-effective integration into RF systems. The MR1 suffix typically denotes a specific tape and reel packaging configuration or variant within the broader MRF5812 product line distributed by various semiconductor manufacturers.
Replacement Considerations
Direct substitutes may include the MRF5812R1 or standard MRF5812 variants from Microsemi or Qorvo. Verify pinout compatibility and package dimensions before substitution. Cross-reference datasheets to confirm that noise figure and gain specifications meet the original design intent.
