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Product Detailed Parameters
- Description：RF TRANS NPN 17V 5.5GHZ 244A-01
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：17V
- Frequency - Transition：5.5GHz
- Noise Figure (dB Typ @ f)：3dB @ 0.5GHz
- Gain：13dB
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 50mA, 5V
- Current - Collector (Ic) (Max)：200mA
- Operating Temperature：200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：244A-01
- Supplier Device Package：244A-01, STYLE 1
- Grade：-
- Qualification：-
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Overview
The MRF587 is an NPN silicon high-frequency transistor from MACOM Technology Solutions, designed for RF applications. It features a typical noise figure of 3.0 dB at 500 MHz with a collector current of 90 mA and a maximum available power gain of 16.5 dB at the same frequency. The device incorporates ion implantation technology and utilizes a gold metal system. It achieves a transition frequency (fT) of 5.5 GHz and includes nichrome emitter ballast resistors to ensure stability.
Feature Summary
- Ion implanted construction with a gold metal system
- Nichrome emitter ballast resistors for thermal stability
- Low intermodulation distortion characteristics
Applications
- High-gain tuned amplifiers
- Wideband amplifiers
- CATV systems
- MATV systems
- Instrumentation applications
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the component meets all required environmental and export classification standards for the intended deployment region. Ensure compatibility with existing circuit designs regarding biasing requirements and thermal management specifications.
Selection Notes
Select this component when low noise figure and high linearity are critical design parameters. The device is suitable for circuits requiring high power gain in the VHF/UHF range. Evaluate the need for nichrome emitter ballast resistors if thermal stability under varying load conditions is a primary concern for the amplifier topology.
Part Context
This transistor belongs to the M/A-COM RF Line series of NPN silicon devices. It is engineered specifically for high-frequency performance where low noise and ultra-linear operation are prioritized. The product line targets professional communication and broadcast infrastructure markets.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the typical noise figure of the MRF587?
The typical noise figure is 3.0 dB at a frequency of 500 MHz with a collector current of 90 mA.
What is the transition frequency (fT) of the MRF587?
The transition frequency is 5.5 GHz.
How does the MRF587 achieve low intermodulation distortion?
The device achieves low intermodulation distortion through its specific design, characterized by a TB3 of -70 dB and a DIN of 125 dB µV.
