MRF5P21180HR6

Overview

The MRF5P21180HR6 is a dual-channel lateral N-channel RF power MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers an average output power of 38 watts per channel at 28 volts with a quiescent drain current of 1600 mA. The device provides a typical power gain of 14 dB and a drain efficiency of 25.5%. It features internal input and output matching, integrated ESD protection, and qualified operation up to 32 Vdc.

Feature Summary

• Internally matched on both input and output ports to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Qualified for continuous operation at maximum drain voltages up to 32 Vdc
• Low thermal resistance package construction

Applications

• W-CDMA base station amplifiers
• TDMA amplifier applications
• CDMA amplifier applications
• Multicarrier amplifier systems
• PCN-PCS/cellular radio transmitters

Procurement Notes

Verify the specific ordering suffix R6 confirms tape and reel packaging containing 150 units per 56 mm reel. Confirm RoHS compliance status and lead time requirements directly with the manufacturer or authorized distributors before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high linearity in Class AB operation within the 2110 to 2170 MHz frequency range. Ensure the application supports the specified 28 Vdc supply voltage and manages the thermal dissipation requirements associated with the stated power levels.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field-Effect Transistor family. It utilizes a silicon lateral MOSFET technology housed in the CASE 375D-05 package style. The device represents a specialized solution for cellular infrastructure amplification.

Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical specifications against alternative models from the same manufacturer series.