MRF5S19100HSR5

Overview

The MRF5S19100HSR3 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications operating between 1930 MHz and 1990 MHz. It delivers 22 Watts average output power at a drain voltage of 28 Volts with a quiescent current of 1000 mA. The device provides a typical power gain of 13.9 dB and a drain efficiency of 25.5% under two-carrier N-CDMA conditions. Maximum ratings include a drain-source voltage of 65 Vdc, total device dissipation of 269 W, and an operating junction temperature up to 200 °C.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Qualified for operation up to a maximum drain voltage of 32 Vdc
• Characterized using series equivalent large-signal impedance parameters

Applications

• PCN and PCS base station amplifiers
• TDMA amplifier stages
• CDMA amplifier stages
• Multicarrier amplifier applications

Procurement Notes

Verify the specific suffix against the datasheet revision history. Confirm RoHS compliance status as the document indicates updates to component numbers. Check for Product Change Notifications regarding test reduction procedures. Ensure the ordering code matches the intended package style NI-780S.

Selection Notes

Select this component for linear RF power amplification in cellular infrastructure. Evaluate thermal management requirements based on the specified junction-to-case resistance. Verify that the application signal characteristics align with the documented two-carrier N-CDMA performance metrics. Consider the internal matching when designing surrounding passive components.

Part Context

This part belongs to the MRF5S19100H family of RF power lateral MOSFETs manufactured by Freescale Semiconductor. The device utilizes silicon technology within a ceramic flatpack package. It serves as a high-power active element for wireless communication base stations requiring robust linearity and efficiency.

Replacement Considerations

Consult the manufacturer's documentation for direct substitutes. Cross-reference electrical parameters such as breakdown voltage and thermal resistance before implementation.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage is rated at +65 Vdc.

Is the device internally matched?

Yes, the MRF5S19100HSR3 features internal matching on both the input and output ports.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200 °C.