MRF5S19130HR3

Overview

The MRF5S19130HR3 is an RF MOSFET LDMOS transistor designed for base station applications. It operates at a drain voltage of 28 V with a continuous drain current of 1.2 A. The device functions within the frequency range of 1900 to 2000 MHz, delivering an output power of 26 W and a gain of 13 dB. It utilizes the NI-880H-2L package.

Feature Summary

• Designed for PCN and PCS base station applications
• Suitable for TDMA, CDMA and multicarrier amplifier applications

Applications

• PCN base station amplifiers
• PCS base station amplifiers
• TDMA amplifier applications
• CDMA amplifier applications
• Multicarrier amplifier applications

Procurement Notes

Verify the specific suffix (R3) against official NXP/Freescale documentation to confirm pinout and thermal characteristics. Ensure the NI-880H-2L package matches your PCB footprint requirements. Confirm RoHS compliance status through the manufacturer's latest certification documents before finalizing procurement.

Selection Notes

Select this component when designing amplifiers for PCS and PCN bands requiring 26 W output. The 28 V operating voltage and 1.2 A current rating define the biasing network. Consider the NI-880H-2L package for thermal management in high-power RF stages.

Part Context

This part belongs to the MRF5S series of RF MOSFETs from Freescale Semiconductor. These devices are engineered for linear amplification in cellular infrastructure. The series offers high efficiency and linearity for multi-carrier signals.

Replacement Considerations

MRF5S19130HR5