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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI880S
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：2.11GHz ~ 2.17GHz
- Gain：13.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.2 A
- Power - Output：28W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-880S
- Supplier Device Package：NI-880S
- Configuration：-
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Overview
The MRF5S21130HSR5 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. It delivers 28 Watts average output power with a drain efficiency of 26% and a power gain of 13.5 dB under typical two-carrier W-CDMA conditions. The device operates at a maximum drain-source voltage of 65 Vdc and features internal matching, ESD protection, and RoHS compliance.
Feature Summary
- Internally matched input and output networks for simplified circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Qualified for operation up to a maximum of 32 Vdc drain supply
- Low thermal resistance package construction
Applications
- W-CDMA base station amplifiers
- TDMA amplifier stages
- CDMA amplifier stages
- Multicarrier amplifier applications
- PCN-PCS/cellular radio systems
Procurement Notes
Verify the specific suffix against the datasheet; the HS suffix indicates the NI-880 package style. Confirm component availability as the data sheet is archived and the part may no longer be manufactured. Ensure the supplier provides valid traceability documentation for this legacy Freescale Semiconductor product.
Selection Notes
Select this component for broadband RF power amplification in cellular infrastructure. Validate impedance matching using the provided series equivalent large-signal impedance parameters. Consider the thermal characteristics and derating requirements when designing the heat dissipation system for continuous wave or high-power pulsed operations.
Part Context
This device belongs to the MRF5S21130H family of RF power LDMOS transistors. It is specifically engineered for commercial and industrial wireless communication systems requiring high linearity and power density within the 2110 to 2170 MHz frequency range.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. No direct public substitute part numbers are confirmed in the provided documentation.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) rating is -0.5 to +65 Vdc.
Is the device internally matched?
Yes, the MRF5S21130HSR5 is internally matched on both the input and output ports.
What is the typical power gain at 28 Watts average output?
The typical power gain (Gps) is 13.5 dB when operating at 28 Watts average output power.
