MRF5S21150HR3

$61.29

Description：RF MOSFET LDMOS 28V NI880
Series：-

SKU:e37ea55b17e7 Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI880
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：2.11GHz ~ 2.17GHz
Gain：12.5dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.3 A
Power - Output：33W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：NI-880
Supplier Device Package：NI-880
Configuration：-

Download product information

MRF5S21150HR3

Overview

The MRF5S21150HR3 is an RF MOSFET utilizing LDMOS technology, designed for high-power applications in the S-band. It operates at a test voltage of 28 V with a rated voltage of 65 V and a maximum current of 1.3 A. The device delivers 33 W output power with a gain of 12.5 dB across frequencies from 2.11 GHz to 2.17 GHz. Packaged in an NI-880 housing, it is suitable for multicarrier amplifier designs.

Feature Summary

LDMOS construction for high-power RF performance
Optimized for multicarrier amplifier applications
NI-880 package design

Applications

W-CDMA base station amplifiers
TDMA system amplifiers
Multicarrier amplifier circuits

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and datasheet revisions prior to integration. Ensure proper handling procedures are followed due to electrostatic sensitivity inherent to semiconductor devices.

Selection Notes

Select this component for S-band applications requiring 33 W output power. Consider the NI-880 package constraints for thermal management and PCB layout. Evaluate impedance matching networks to achieve the specified 12.5 dB gain within the 2.11–2.17 GHz operational range.

Part Context

This part belongs to the Freescale Semiconductor MRF5S series of RF power transistors. These devices are engineered for cellular infrastructure, specifically targeting base station transmitter modules where linearity and power efficiency are critical requirements for modern communication standards.