MRF5S4125NBR1

Overview

The MRF5S4125NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 500 MHz. It operates at a maximum drain-source voltage of 65 Vdc and supports junction temperatures up to 200°C. At 465 MHz with 28 Vdc supply, it delivers 25 Watts average output power in single-carrier N-CDMA mode, achieving 23 dB power gain and 30.2% drain efficiency. The device features integrated ESD protection and is qualified for operation up to 32 Vdd.

Feature Summary

• Broadband performance suitable for frequencies up to 500 MHz
• High ruggedness capable of handling 10:1 VSWR
• Integrated electrostatic discharge (ESD) protection
• Internally matched for ease of use

Applications

• Large-signal common-source amplifier applications in 28 volt base station equipment
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify the specific ordering suffix R1 indicates tape and reel packaging containing 500 units per 44 mm reel. Confirm that this component carries a Lifetime Buy status with a last order date of July 1, 2011, and a final shipment deadline of June 30, 2012. Ensure compatibility with existing designs requiring these specific end-of-life constraints before procurement.

Selection Notes

Select this component for designs requiring high gain and broadband performance in large-signal amplifier configurations. It is optimized for 28 volt base station equipment operating within the 450-480 MHz range. Consider its internal matching capabilities to simplify circuit design and its ability to withstand significant load mismatches without failure.

Part Context

This part belongs to the RF Power Field Effect Transistors category from Freescale Semiconductor, now part of NXP USA Inc. It is a lateral N-channel device specifically engineered for high-power RF applications. The datasheet identifies it as a robust solution for wideband amplification where reliability under mismatched load conditions is critical.

Replacement Considerations

MRF5S4125NR1 is the non-reel equivalent variant.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200°C.

Is the device internally matched?

Yes, the device is internally matched for ease of use.

What is the typical power gain at 465 MHz?

The typical power gain is 23 dB at 465 MHz with 28 Vdc supply and 1100 mA quiescent current.